AS4C128M8D3LA-12BCN

Product Overview

Category

AS4C128M8D3LA-12BCN belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a main memory component in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compatible with standard memory interfaces

Package

AS4C128M8D3LA-12BCN is available in a compact and industry-standard package, making it easy to integrate into different electronic systems.

Essence

The essence of AS4C128M8D3LA-12BCN lies in its ability to provide reliable and efficient data storage and retrieval functions for electronic devices.

Packaging/Quantity

AS4C128M8D3LA-12BCN is typically packaged in trays or reels, and the quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Model: AS4C128M8D3LA-12BCN
• Memory Type: Dynamic Random-Access Memory (DRAM)
• Organization: 128 Megabit x 8
• Operating Voltage: 2.5V - 2.75V
• Speed Grade: DDR3-1600 (PC3-12800)
• CAS Latency: 12
• Refresh Mode: Auto-refresh and Self-refresh
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Pin Count: 96 pins
• Temperature Range: Commercial (0°C to +85°C)

Detailed Pin Configuration

AS4C128M8D3LA-12BCN has a total of 96 pins, which are arranged as follows:

• Pin 1: VDD
• Pin 2: DQ0
• Pin 3: DQ1
• ...
• Pin 94: VSS
• Pin 95: VSS
• Pin 96: NC (No Connection)

For the complete pin configuration diagram, please refer to the datasheet provided by the manufacturer.

Functional Features

• High-speed data transfer rate
• Low power consumption
• Support for various memory operations (read, write, refresh)
• On-die termination (ODT) for improved signal integrity
• Error correction capabilities (ECC) for data reliability
• Burst mode operation for efficient data access

Advantages and Disadvantages

Advantages

• Fast data transfer speeds enhance overall system performance.
• Large storage capacity allows for extensive data storage.
• Compatibility with standard memory interfaces ensures easy integration into existing systems.
• Error correction capabilities improve data reliability.

Disadvantages

• Volatile memory requires constant power supply, leading to data loss in case of power failure.
• Higher power consumption compared to non-volatile memory types.
• Limited lifespan due to the finite number of read/write cycles.

Working Principles

AS4C128M8D3LA-12BCN operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which need to be periodically refreshed to maintain their charge. When a read or write operation is performed, the memory controller accesses the specific memory address and transfers data through the memory bus.

Detailed Application Field Plans

AS4C128M8D3LA-12BCN finds applications in various fields, including: - Personal computers and laptops - Servers and data centers - Networking equipment - Industrial automation systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to AS4C128M8D3LA-12BCN include: - AS4C256M16D3LA-12BCN: 256 Megabit x 16 DDR3 DRAM module - AS4C64M32D3LA-12BCN: 64 Megabit x 32 DDR3 DRAM module - AS4C512M8D3LA-12BCN: 512 Megabit x 8 DDR3 DRAM module

These alternative models offer different memory capacities and configurations to suit specific system requirements.

Note: The content provided above is a sample structure for an encyclopedia entry and may not reflect the actual specifications or details of AS4C128M8D3LA-12BCN. Please refer to the manufacturer's datasheet for accurate information.