Bourns Inc.
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পণ্যের বিবরণের জন্য স্পেসিফিকেশন দেখুন৷.
BD242B-S
বিস্তারিত দেখুন ডেটাশিট

BD242B-S Product Overview

Introduction

BD242B-S is a semiconductor device belonging to the category of power transistors. It is widely used in electronic circuits for amplification and switching applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power Transistor
  • Use: Amplification and Switching
  • Characteristics: High voltage capability, high current capability, low saturation voltage
  • Package: TO-220AB
  • Essence: Silicon NPN Epitaxial Planar Transistor
  • Packaging/Quantity: Typically packaged in reels or tubes containing 50 to 100 units

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector-Base Voltage (VCBO): 100V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 6A
  • Power Dissipation (PD): 65W
  • Transition Frequency (fT): 30MHz

Detailed Pin Configuration

The BD242B-S transistor has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High voltage capability allows for use in various power applications
  • Low saturation voltage minimizes power loss during switching operations
  • Fast switching speed enables efficient amplification and signal processing

Advantages

  • Robust construction for reliable performance in demanding environments
  • Suitable for high-power applications due to high current and voltage ratings
  • Low saturation voltage reduces heat dissipation and improves efficiency

Disadvantages

  • Relatively larger package size compared to surface-mount devices
  • Limited transition frequency may restrict high-frequency applications

Working Principles

The BD242B-S operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The BD242B-S is commonly used in the following applications: - Power amplifiers - Audio amplifiers - Motor control circuits - Voltage regulators - Switching power supplies

Detailed and Complete Alternative Models

Some alternative models to BD242B-S include: - BD243B-S - TIP31C - 2N3055 - MJ15003

In conclusion, the BD242B-S power transistor offers a robust and versatile solution for various amplification and switching applications, making it a popular choice among electronic circuit designers.

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প্রযুক্তিগত সমাধানে BD242B-S এর প্রয়োগ সম্পর্কিত 10টি সাধারণ প্রশ্ন ও উত্তর তালিকাভুক্ত করুন

  1. What is BD242B-S?

    • BD242B-S is a silicon NPN power transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key features of BD242B-S?

    • The key features include high current capability, low collector-emitter saturation voltage, and complementary PNP types available (BD241B-S).

  3. What are the typical applications of BD242B-S?

    • Typical applications include audio amplifiers, power linear and switching industrial equipment, and general purpose power amplification.

  4. What is the maximum collector current of BD242B-S?

    • The maximum collector current is 3A.

  5. What is the maximum collector-emitter voltage of BD242B-S?

    • The maximum collector-emitter voltage is 100V.

  6. Is BD242B-S suitable for high-frequency applications?

    • No, BD242B-S is not suitable for high-frequency applications due to its slower switching speed.

  7. What is the thermal resistance of BD242B-S?

    • The thermal resistance is approximately 2.5°C/W.

  8. Can BD242B-S be used in automotive applications?

    • Yes, BD242B-S can be used in automotive applications where its specifications meet the requirements.

  9. Does BD242B-S require a heatsink for operation?

    • It is recommended to use a heatsink for BD242B-S to ensure proper heat dissipation, especially in high-power applications.

  10. Are there any alternative transistors similar to BD242B-S?

    • Yes, alternatives include BD243B-S, BD244B-S, and other transistors with similar specifications and package type.