MB85RS256BPNF-G-JNE1

Product Overview

Category: Non-volatile RAM (NVRAM)

Use: The MB85RS256BPNF-G-JNE1 is a non-volatile RAM chip designed for data storage in various electronic devices. It provides reliable and high-speed read/write operations, making it suitable for applications that require frequent data updates.

Characteristics: - Non-volatile: Retains data even when power is disconnected - High-speed operation: Enables fast data access and updates - Low power consumption: Optimized for energy-efficient devices - Wide temperature range: Suitable for use in extreme environments

Package: The MB85RS256BPNF-G-JNE1 is available in a compact and durable package, ensuring easy integration into electronic devices.

Essence: This NVRAM chip combines the benefits of non-volatility and high-speed operation, providing an efficient solution for data storage in various applications.

Packaging/Quantity: The MB85RS256BPNF-G-JNE1 is typically sold in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory capacity: 256 kilobits (32 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7V to 3.6V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 10 years
• Endurance: 10^6 write cycles

Detailed Pin Configuration

The MB85RS256BPNF-G-JNE1 features an 8-pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. SDA: Serial data input/output for I2C communication
4. SCL: Serial clock input for I2C communication
5. WP: Write protect pin (optional)
6. NC: No connection
7. NC: No connection
8. NC: No connection

Functional Features

• Random access: Allows direct read/write operations to any memory location
• Page write mode: Enables simultaneous programming of multiple bytes for efficient data updates
• Software write protection: Provides a write protection feature to prevent accidental modification of stored data
• Advanced security features: Supports unique device ID and password protection for enhanced data security

Advantages and Disadvantages

Advantages: - Non-volatile storage: Ensures data retention even during power loss - High-speed operation: Facilitates fast data access and updates - Low power consumption: Ideal for battery-powered devices - Wide temperature range: Suitable for use in various environments - Compact package: Easy integration into electronic devices

Disadvantages: - Limited memory capacity: May not be suitable for applications requiring larger storage space - Relatively higher cost compared to traditional RAM

Working Principles

The MB85RS256BPNF-G-JNE1 utilizes ferroelectric random-access memory (FeRAM) technology. It stores data by utilizing the polarization of ferroelectric material, which can retain its state even when power is disconnected. This allows for non-volatile data storage with high-speed read/write capabilities.

Detailed Application Field Plans

The MB85RS256BPNF-G-JNE1 is well-suited for a wide range of applications, including but not limited to: - Industrial automation systems - Automotive electronics - Smart meters - Medical devices - Wearable devices - Internet of Things (IoT) devices

Its non-volatile nature, high-speed operation, and low power consumption make it an ideal choice for applications that require frequent data updates and reliable data storage.

Detailed and Complete Alternative Models

• MB85RS256B: Similar specifications and features, but without the "PNF-G-JNE1" suffix
• MB85RC256V: Similar capacity and interface, but with a different package and pin configuration
• MB85RC256T: Similar capacity and interface, but optimized for automotive applications

These alternative models offer similar functionality and can be considered as alternatives to the MB85RS256BPNF-G-JNE1 based on specific requirements and compatibility.

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