IS42S81600F-7TL-TR

Product Overview

Category

IS42S81600F-7TL-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S81600F-7TL-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S81600F-7TL-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in reels and comes in quantities suitable for mass production.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: -7
• Temperature Range: Commercial (0°C to +70°C)
• Interface: Parallel
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of IS42S81600F-7TL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /BA0
40. /BA1
41. VSS
42. VSS
43. VSS
44. VDDQ
45. VDDQ
46. VDDQ
47. NC
48. NC

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Easy integration with various electronic devices

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity allows for the handling of extensive data.
• Low power consumption prolongs battery life in portable devices.
• Compact package size enables space-efficient designs.
• Reliable performance ensures data integrity.

Disadvantages

• Sensitive to electrical noise, requiring proper shielding and grounding.
• Limited compatibility with older device interfaces.
• Higher cost compared to other memory technologies.

Working Principles

IS42S81600F-7TL-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, which are refreshed periodically to maintain data integrity. The memory controller synchronizes data transfers with the clock signal, allowing for high-speed and efficient data access.

Detailed Application Field Plans

IS42S81600F-7TL-TR finds applications in various electronic devices, including: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S81600F-7TL-TR include: - IS42S16160D-7TL (16 Megabit SDRAM) - IS45S16400J-7TLA1 (64 Megabit SDRAM) - IS43DR16640A-3DBL (256 Megabit DDR3 SDRAM)

These alternative models offer similar functionality and can be used as replacements depending on specific requirements.

In conclusion, IS42S81600F-7TL-TR is a high-performance DRAM module that provides fast and reliable data storage for a wide range of electronic devices. Its compact size, low power consumption, and large storage capacity make it an ideal choice for modern computing needs.