IS64WV51216BLL-10MA3-TR

Product Overview

Category

IS64WV51216BLL-10MA3-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and other digital systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Compact package size
• Wide temperature range

Package

IS64WV51216BLL-10MA3-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS64WV51216BLL-10MA3-TR lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of IS64WV51216BLL-10MA3-TR units.

Specifications

• Part Number: IS64WV51216BLL-10MA3-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Density: 512 Megabits (64 Megabytes)
• Organization: 16M words x 32 bits
• Operating Voltage: 2.5V - 3.6V
• Speed Grade: 10ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS64WV51216BLL-10MA3-TR has a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /WE
37. /CAS
38. /RAS
39. /CS
40. CLK
41. CKE
42. /LDQM
43. UDQM
44. /RESET
45. /ZZ
46. ZZ
47. VSS
48. VDD
49. NC
50. NC
51. NC
52. NC
53. NC
54. VSS

Functional Features

• Synchronous operation with a clock signal
• Burst mode for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Multiple banks for concurrent access

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data access
• Non-volatile memory retains data even when power is lost
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for space-efficient designs
• Wide temperature range ensures reliable performance in various environments

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternative models
• Requires proper handling and storage conditions to prevent damage

Working Principles

IS64WV51216BLL-10MA3-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a bit of information. The stored data is accessed by sending address signals and control signals synchronized with a clock signal.

Detailed Application Field Plans

IS64WV51216BLL-10MA3-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS64WV51216BLL-10MA3-TR include: - MT48LC32M16A2P-75IT: 512 Megabit SDRAM, 16M words x 32 bits, 7.5ns speed grade. - K4S561