IXYS
চিত্রটি উপস্থাপনা হতে পারে৷
পণ্যের বিবরণের জন্য স্পেসিফিকেশন দেখুন৷.
IXFN130N30
বিস্তারিত দেখুন ডেটাশিট

IXFN130N30

Product Overview

Category

The IXFN130N30 belongs to the category of power MOSFETs.

Use

It is commonly used in high-power applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IXFN130N30 is typically available in a TO-268 package.

Essence

This MOSFET is essential for efficient power management in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a specific quantity per reel, depending on the manufacturer's specifications.

Specifications

  • Voltage Rating: 300V
  • Current Rating: 130A
  • On-Resistance: 0.04 ohms
  • Gate Threshold Voltage: 2.5V
  • Maximum Power Dissipation: 625W

Detailed Pin Configuration

The IXFN130N30 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low gate charge
  • Avalanche energy specified
  • Enhanced body diode dV/dt and di/dt capability

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance leads to reduced conduction losses
  • Fast switching speed allows for efficient operation

Disadvantages

  • Higher gate drive requirements compared to lower voltage MOSFETs
  • Potential for increased switching losses at higher frequencies

Working Principles

The IXFN130N30 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The IXFN130N30 is well-suited for use in the following applications: - Motor drives for electric vehicles - Industrial power supplies - Renewable energy systems - Uninterruptible power supplies (UPS) - Welding equipment

Detailed and Complete Alternative Models

Some alternative models to the IXFN130N30 include: - IRFP4668PbF - FDPF33N25T - STW75N20

In conclusion, the IXFN130N30 power MOSFET offers high-performance characteristics suitable for demanding high-power applications, making it a valuable component in modern electronic systems.

Word Count: 346

প্রযুক্তিগত সমাধানে IXFN130N30 এর প্রয়োগ সম্পর্কিত 10টি সাধারণ প্রশ্ন ও উত্তর তালিকাভুক্ত করুন

  1. What is the maximum drain-source voltage of IXFN130N30?

    • The maximum drain-source voltage of IXFN130N30 is 300V.

  2. What is the continuous drain current rating of IXFN130N30?

    • The continuous drain current rating of IXFN130N30 is 130A.

  3. What is the on-state resistance (RDS(on)) of IXFN130N30?

    • The on-state resistance (RDS(on)) of IXFN130N30 is typically 0.038 ohms.

  4. What is the gate threshold voltage of IXFN130N30?

    • The gate threshold voltage of IXFN130N30 is typically 2.5V.

  5. What are the typical applications for IXFN130N30?

    • IXFN130N30 is commonly used in applications such as motor drives, inverters, and power supplies.

  6. What is the operating temperature range of IXFN130N30?

    • The operating temperature range of IXFN130N30 is -55°C to 150°C.

  7. Does IXFN130N30 require a heat sink for operation?

    • Yes, IXFN130N30 typically requires a heat sink for efficient operation, especially at high currents.

  8. Can IXFN130N30 be used in parallel to increase current handling capability?

    • Yes, IXFN130N30 can be used in parallel to increase current handling capability in high-power applications.

  9. What is the input capacitance of IXFN130N30?

    • The input capacitance of IXFN130N30 is typically 6800pF.

  10. Is IXFN130N30 suitable for high-frequency switching applications?

    • Yes, IXFN130N30 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.