JR28F032M29EWTA

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-density, fast read/write speeds
• Package: Surface Mount Technology (SMT)
• Essence: Stores data using electrically erasable programmable read-only memory (EEPROM) technology
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 32 megabits (4 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The JR28F032M29EWTA flash memory has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | ... | ... | ... | | 30 | A13 | Address Input | | 31 | A14 | Address Input | | 32 | A15 | Address Input | | 33 | CE# | Chip Enable Input | | 34 | OE# | Output Enable Input | | 35 | WE# | Write Enable Input | | ... | ... | ... | | 48 | DQ7 | Data Input/Output | | 49 | VCC | Power Supply | | 50 | GND | Ground |

Functional Features

• High-speed read and write operations
• Low power consumption
• Reliable data retention
• Built-in error correction code (ECC) for data integrity
• Sector erase and byte program operations

Advantages

• High storage capacity in a compact form factor
• Fast access times for quick data retrieval
• Low power consumption extends battery life in portable devices
• Reliable data retention ensures long-term data integrity
• ECC provides error detection and correction capabilities

Disadvantages

• Limited write endurance compared to other memory technologies
• Higher cost per unit compared to traditional hard drives
• Susceptible to data loss in case of power failure during write operations

Working Principles

The JR28F032M29EWTA flash memory uses EEPROM technology to store data. It consists of a grid of memory cells, each capable of storing a single bit of information. Data is written to the memory by applying electrical voltage to specific cells, altering their state. Reading data involves detecting the voltage levels in the cells to determine the stored information.

Detailed Application Field Plans

The JR28F032M29EWTA flash memory is widely used in various electronic devices, including: 1. Mobile phones and smartphones 2. Digital cameras 3. Portable media players 4. Solid-state drives (SSDs) 5. Automotive electronics 6. Industrial control systems

Detailed and Complete Alternative Models

1. JR28F064M29EWTA - 64 megabit (8 megabyte) flash memory with similar specifications
2. JR28F128M29EWTA - 128 megabit (16 megabyte) flash memory with similar specifications
3. JR28F256M29EWTA - 256 megabit (32 megabyte) flash memory with similar specifications

These alternative models offer higher storage capacities while maintaining compatibility with the JR28F032M29EWTA in terms of pin configuration and functionality.

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