M29DW256G70ZA6F TR

Product Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics: High capacity, non-volatile, fast access speed
• Package: Integrated circuit chip
• Essence: Flash memory
• Packaging/Quantity: Individual chip

Specifications

• Model: M29DW256G70ZA6F TR
• Capacity: 256 gigabytes (GB)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds (ns)
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 write/erase cycles

Detailed Pin Configuration

The M29DW256G70ZA6F TR has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. /CS: Chip select
4. SCK: Serial clock input
5. SI: Serial data input
6. SO: Serial data output
7. WP#/ACC: Write protect or accelerated programming control
8. HOLD#/RESET#: Hold or reset control

Functional Features

• High storage capacity for large data requirements
• Non-volatile memory retains data even when power is disconnected
• Fast access speed allows for quick data retrieval
• SPI interface enables easy integration with various systems
• Write protection feature prevents accidental data modification
• Low power consumption for energy-efficient operation

Advantages and Disadvantages

Advantages

• Large storage capacity meets demanding data storage needs
• Non-volatile nature ensures data integrity during power loss
• Fast access speed enhances overall system performance
• SPI interface simplifies integration with different devices
• Write protection feature safeguards against data corruption
• Low power consumption prolongs battery life in portable applications

Disadvantages

• Limited endurance compared to other memory technologies
• Relatively higher cost per gigabyte compared to traditional hard drives
• Limited compatibility with older systems lacking SPI support

Working Principles

The M29DW256G70ZA6F TR is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve digital information. When data is written, an electrical charge is trapped in the floating gate, altering the transistor's behavior. This charge can be removed during erasure, allowing new data to be written. The memory cells are organized into blocks, which can be individually erased or written.

Detailed Application Field Plans

The M29DW256G70ZA6F TR is suitable for a wide range of applications, including:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Consumer electronics
4. Automotive infotainment systems
5. Industrial control systems
6. Medical devices
7. Networking equipment

Detailed and Complete Alternative Models

1. M29DW128G70ZA6F TR: 128GB capacity, same specifications as M29DW256G70ZA6F TR
2. M29DW512G70ZA6F TR: 512GB capacity, same specifications as M29DW256G70ZA6F TR
3. M29DW1T0G70ZA6F TR: 1 terabyte (TB) capacity, same specifications as M29DW256G70ZA6F TR

These alternative models offer varying storage capacities while maintaining the same specifications as the M29DW256G70ZA6F TR.

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