M29W400DT70N1

Product Overview

Category

M29W400DT70N1 belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Compact size: Enables integration into small form factor devices.
• Durable: Resistant to physical shocks and vibrations.
• Low power consumption: Helps prolong battery life in portable devices.

Package

M29W400DT70N1 is available in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of M29W400DT70N1 lies in its ability to provide reliable and high-performance data storage in a compact and energy-efficient form.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29W400DT70N1 flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 nanoseconds
• Erase/Program Suspend and Resume Modes
• Block Erase Protection: Top or Bottom 64 Kbytes
• Data Polling and Toggle Bit Features
• Electronic Signature
• Endurance: 100,000 Program/Erase Cycles

Detailed Pin Configuration

The pin configuration of M29W400DT70N1 is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE#: Reset/byte control signal
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect or accelerated programming control signal
10. VSS: Ground

Functional Features

• Fast Read and Write Operations: Allows for quick access to stored data.
• Erase and Program Operations: Enables modification of stored data.
• Block Erase Protection: Protects specific blocks of memory from accidental erasure.
• Electronic Signature: Provides a unique identifier for the flash memory chip.
• Data Polling and Toggle Bit Features: Ensures reliable data transfer.

Advantages and Disadvantages

Advantages

• High-speed read and write operations facilitate efficient data access.
• Compact size allows for integration into various electronic devices.
• Non-volatile memory ensures data retention even during power loss.
• Low power consumption helps prolong battery life in portable devices.

Disadvantages

• Limited storage capacity compared to other types of memory.
• Endurance limitations with a limited number of program/erase cycles.

Working Principles

M29W400DT70N1 utilizes a floating-gate transistor technology known as NOR flash memory. It stores data by trapping electric charge within insulated floating gates, which can be electrically programmed and erased. The stored charge determines the logic state of each memory cell, allowing for data retrieval and modification.

Detailed Application Field Plans

M29W400DT70N1 finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. M29W400DB70N6: Similar flash memory chip with a different access time of 70 nanoseconds.
2. M29W400DT55N1: Flash memory chip with a lower access time of 55 nanoseconds.
3. M29W800DB70N6: Double the memory capacity (8 Megabits) with a similar access time of 70 nanoseconds.

These alternative models provide options with varying specifications to suit different application requirements.

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