MT47H64M16HR-3 L:H TR

Product Overview

Category

The MT47H64M16HR-3 L:H TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for data storage and retrieval purposes.

Characteristics

• High-speed operation: The MT47H64M16HR-3 L:H TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
• Large capacity: With a capacity of 64 megabits (8 megabytes), this DRAM chip can store a significant amount of data.
• Low power consumption: The chip is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT47H64M16HR-3 L:H TR is available in a small form factor package, allowing for space-efficient integration into electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT47H64M16HR-3 L:H TR is typically packaged in tape and reel format, which facilitates automated assembly processes. It is commonly available in quantities of 1000 units per reel.

Specifications

• Memory Type: DDR3 SDRAM
• Organization: 64M words x 16 bits
• Operating Voltage: 1.5V
• Clock Frequency: Up to 800 MHz
• Data Rate: Up to 1600 Mbps
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C
• Package Type: 96-ball FBGA

Detailed Pin Configuration

The MT47H64M16HR-3 L:H TR features a 96-ball fine-pitch ball grid array (FBGA) package. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CK
44. CKE
45. CS#
46. DM0
47. DM1
48. VSS
49. DQS0
50. DQS#0
51. VREF
52. VSS
53. DQS1
54. DQS#1
55. VSS
56. DQSN0
57. DQSN1
58. VSS
59. DQSN2
60. DQSN3
61. VSS
62. DQSN4
63. DQSN5
64. VSS

Functional Features

• High-speed data transfer: The MT47H64M16HR-3 L:H TR supports fast data transfer rates, enabling efficient communication between the memory chip and the device's processor.
• Auto-refresh and self-refresh modes: This DRAM chip automatically refreshes stored data to maintain its integrity and reliability.
• Low power consumption: The product is designed to minimize power usage, making it suitable for energy-efficient devices.
• Error correction: The MT47H64M16HR-3 L:H TR incorporates error correction techniques to detect and correct data errors, ensuring data accuracy.

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access and processing.
• Large capacity enables storage of significant amounts of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates space-efficient integration into electronic devices.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Limited compatibility: The MT47H64M16HR-3 L:H TR is specifically designed for DDR3 SDRAM applications and may not be compatible with older or newer memory standards.
• Relatively high cost: Compared to other memory options, DDR3 SDRAM chips can be more