MT47H64M8JN-25E:G

Product Overview

Category

MT47H64M8JN-25E:G belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and accessing data quickly.

Characteristics

• High-speed data transfer
• Large storage capacity
• Volatile memory
• Requires periodic refreshing

Package

MT47H64M8JN-25E:G is packaged in a small form factor dual in-line memory module (SODIMM).

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in a compact package.

Packaging/Quantity

MT47H64M8JN-25E:G is typically sold in individual units or in packs of multiple modules, depending on the supplier.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512MB
• Speed: 800MHz
• Voltage: 1.5V
• Organization: 64M words x 8 bits
• Operating Temperature: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The pin configuration of MT47H64M8JN-25E:G is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VSS
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. VREF
31. VSS
32. CK0
33. CKE
34. CS#
35. WE#
36. RAS#
37. CAS#
38. BA0
39. BA1
40. VSS

Functional Features

• High-speed data transfer rate for improved system performance.
• Low power consumption for energy efficiency.
• Auto-refresh capability to maintain data integrity.
• On-die termination (ODT) for signal integrity optimization.
• Serial presence detect (SPD) for automatic configuration.

Advantages and Disadvantages

Advantages

• Fast data transfer speed enhances overall system performance.
• Compact form factor allows for easy integration into various devices.
• Low power consumption helps prolong battery life in portable devices.
• Auto-refresh feature ensures data integrity without manual intervention.

Disadvantages

• Volatile memory requires constant power supply to retain data.
• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to other memory modules.

Working Principles

MT47H64M8JN-25E:G operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When a read or write operation is performed, the data is accessed by activating the appropriate row and column addresses.

Detailed Application Field Plans

MT47H64M8JN-25E:G finds applications in various fields, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Industrial automation systems - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT47H64M8JN-25E:G include: - MT47H64M16HR-25E:G - MT47H128M8HQ-25E:G - MT47H256M16HR-25E:G - MT47H512M8HQ-25E:G

These models offer different capacities, speeds, and organization options to cater to specific requirements.

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