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N25Q128A13EF840E

N25Q128A13EF840E

Basic Information Overview

  • Category: Non-volatile Memory
  • Use: Data storage and retrieval
  • Characteristics:
    • High-speed performance
    • Large storage capacity
    • Low power consumption
    • Reliable data retention
  • Package: SOP8 (Small Outline Package)
  • Essence: Flash memory chip
  • Packaging/Quantity: Individually packaged, typically sold in reels of 250 or 500 units

Specifications

  • Manufacturer: Micron Technology Inc.
  • Memory Type: Serial NOR Flash
  • Capacity: 128 Megabits (16 Megabytes)
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Erase/Program Cycles: Up to 100,000 cycles
  • Data Retention: Up to 20 years

Detailed Pin Configuration

The N25Q128A13EF840E has a total of 8 pins arranged as follows:

  1. Chip Select (/CS) - Active low input used to enable/disable the device
  2. Serial Clock (SCLK) - Input for synchronizing data transfer
  3. Serial Data Input (SI) - Input for shifting data into the device
  4. Serial Data Output (SO) - Output for shifting data out of the device
  5. Hold (/HOLD) - Input used to pause serial communication
  6. Write Protect (/WP) - Input used to protect the memory from write operations
  7. Ground (GND) - Reference ground connection
  8. Power Supply (VCC) - Power supply input

Functional Features

  • High-speed read and write operations
  • Flexible erase options (sector, block, or chip erase)
  • Software and hardware protection mechanisms
  • Continuous Read Mode for efficient data streaming
  • Dual and Quad I/O modes for increased data transfer rates

Advantages and Disadvantages

Advantages: - Fast read and write speeds enable quick data access - Large storage capacity allows for storing a significant amount of data - Low power consumption prolongs battery life in portable devices - Reliable data retention ensures long-term data integrity

Disadvantages: - Limited erase/program cycles may affect the lifespan of the chip - Higher cost compared to other non-volatile memory options - Requires an external microcontroller or host device for operation

Working Principles

The N25Q128A13EF840E operates based on the principles of flash memory technology. It utilizes a grid of memory cells, each capable of storing electrical charges to represent binary data. The memory cells are organized into sectors and blocks, allowing for efficient read, write, and erase operations.

During a read operation, the device receives commands and address information from the host device. The requested data is then retrieved from the appropriate memory cells and transmitted back to the host.

Write operations involve sending commands, address information, and data to be stored. The device programs the memory cells by applying voltage pulses that trap charges, representing the desired data.

Erase operations clear data by removing trapped charges from memory cells. This can be done at the sector, block, or chip level, depending on the desired granularity.

Detailed Application Field Plans

The N25Q128A13EF840E is widely used in various applications, including:

  1. Consumer Electronics:

    • Smartphones and tablets
    • Digital cameras
    • Gaming consoles
  2. Automotive Systems:

    • Infotainment systems
    • Instrument clusters
    • Advanced driver-assistance systems (ADAS)
  3. Industrial Equipment:

    • Data loggers
    • Programmable logic controllers (PLCs)
    • Human-machine interfaces (HMIs)
  4. Networking Devices:

    • Routers and switches
    • Network attached storage (NAS)
    • Wireless access points

Detailed and Complete Alternative Models

  1. N25Q064A13EF840E: 64 Megabit (8 Megabyte) capacity variant of the same series.
  2. N25Q256A13EF840E: 256 Megabit (32 Megabyte) capacity variant of the same series.
  3. S25FL128SAGMFI011: Similar capacity and features, manufactured by Cypress Semiconductor.
  4. W25Q128JVSIQ: Similar capacity and features, manufactured by Winbond Electronics.

(Note: This is not an exhaustive list, and there may be other alternative models available in the market.)

In conclusion, the N25Q128A13EF840E is a high-performance serial NOR flash memory chip with a capacity of 128 Megabits. It offers fast read/write speeds, large storage capacity, and low power consumption. The chip finds applications in consumer electronics, automotive systems, industrial equipment, and networking devices. While it has limitations such as limited erase/

প্রযুক্তিগত সমাধানে N25Q128A13EF840E এর প্রয়োগ সম্পর্কিত 10টি সাধারণ প্রশ্ন ও উত্তর তালিকাভুক্ত করুন

Sure! Here are 10 common questions and answers related to the application of N25Q128A13EF840E in technical solutions:

  1. Question: What is N25Q128A13EF840E?
    - Answer: N25Q128A13EF840E is a specific model of flash memory chip manufactured by Micron Technology.

  2. Question: What is the storage capacity of N25Q128A13EF840E?
    - Answer: The N25Q128A13EF840E has a storage capacity of 128 megabits (16 megabytes).

  3. Question: What is the interface used for connecting N25Q128A13EF840E to a microcontroller or other devices?
    - Answer: N25Q128A13EF840E uses a Serial Peripheral Interface (SPI) for communication.

  4. Question: What is the operating voltage range of N25Q128A13EF840E?
    - Answer: The operating voltage range of N25Q128A13EF840E is typically between 2.7V and 3.6V.

  5. Question: Can N25Q128A13EF840E be used in automotive applications?
    - Answer: Yes, N25Q128A13EF840E is designed to meet the requirements of automotive applications.

  6. Question: What is the maximum clock frequency supported by N25Q128A13EF840E?
    - Answer: N25Q128A13EF840E supports a maximum clock frequency of 104 MHz.

  7. Question: Does N25Q128A13EF840E support hardware and software write protection?
    - Answer: Yes, N25Q128A13EF840E provides both hardware and software write protection features.

  8. Question: Can N25Q128A13EF840E be used for code execution in microcontroller-based systems?
    - Answer: Yes, N25Q128A13EF840E can be used as an execute-in-place (XIP) memory for code execution.

  9. Question: What is the typical erase time for N25Q128A13EF840E?
    - Answer: The typical erase time for N25Q128A13EF840E is around 4 seconds.

  10. Question: Is N25Q128A13EF840E compatible with other flash memory devices?
    - Answer: N25Q128A13EF840E is compatible with other devices that follow the same SPI protocol and have similar specifications.

Please note that these answers are general and may vary depending on the specific implementation and use case of N25Q128A13EF840E in a technical solution.