N25Q256A83ESF40F TR

Product Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics: High capacity, fast read/write speeds, low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory chip
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Type: Serial NOR Flash
• Memory Size: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read Speed: Up to 108 MHz
• Write Speed: Up to 54 MHz
• Erase Time: Sector erase time of 100ms, block erase time of 1s

Detailed Pin Configuration

The N25Q256A83ESF40F TR has a total of 8 pins:

1. Chip Select (/CS) - Active low input used to enable the device
2. Serial Clock (SCLK) - Input for synchronizing data transfer
3. Serial Data Input (SI) - Input for receiving data from the host
4. Serial Data Output (SO) - Output for transmitting data to the host
5. Hold (/HOLD) - Input used to pause ongoing operations
6. Write Protect (/WP) - Input used to protect the memory from write operations
7. Ground (GND) - Reference ground
8. Power Supply (VCC) - Power supply voltage input

Functional Features

• High-speed data transfer: The N25Q256A83ESF40F TR offers fast read and write speeds, allowing for efficient data storage and retrieval.
• Low power consumption: The chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable data retention: The flash memory technology used in the chip ensures data integrity and long-term storage reliability.
• Flexible interface: The SPI interface allows for easy integration with a wide range of microcontrollers and other devices.

Advantages and Disadvantages

Advantages: - High capacity: With 256 Megabits of storage, the chip can accommodate large amounts of data. - Fast read/write speeds: The high-speed interface enables quick access to stored information. - Low power consumption: The chip's low power requirements make it energy-efficient. - Compact package: The SMT package allows for easy integration into electronic devices.

Disadvantages: - Limited erase time: The sector and block erase times may be slower compared to other memory technologies. - Relatively small memory size: While 256 Megabits is sufficient for many applications, larger storage capacities are available in alternative models.

Working Principles

The N25Q256A83ESF40F TR operates based on the principles of flash memory technology. It uses a grid of memory cells that store data as electrical charges. These charges can be electrically programmed (written) or erased, allowing for non-volatile data storage. The Serial Peripheral Interface (SPI) is used to communicate with the chip, enabling the host device to read from and write to the memory.

Detailed Application Field Plans

The N25Q256A83ESF40F TR is commonly used in various electronic devices that require non-volatile memory for data storage and retrieval. Some typical application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras, and portable media players.
2. Automotive: Infotainment systems, instrument clusters, and navigation systems.
3. Industrial Control Systems: Programmable logic controllers (PLCs), human-machine interfaces (HMIs), and data loggers.
4. Networking Equipment: Routers, switches, and network attached storage (NAS) devices.

Detailed and Complete Alternative Models

• N25Q128A13EF840E TR: 128 Megabit Serial NOR Flash memory chip with similar specifications and features.
• N25Q512A83ESF40F TR: 512 Megabit Serial NOR Flash memory chip with higher storage capacity.

(Note: This is a fictional product and the alternative models mentioned are for illustrative purposes only.)

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