PUMH10Z
Product Overview
Category
The PUMH10Z belongs to the category of high-performance NPN transistors.
Use
It is commonly used for amplification and switching of electronic signals in various applications.
Characteristics
- High gain and low saturation voltage
- Small package size for space-constrained designs
- Suitable for high-speed switching applications
Package
The PUMH10Z is typically available in a small SOT-363 package.
Essence
The essence of the PUMH10Z lies in its ability to provide high performance in a compact form factor.
Packaging/Quantity
It is usually supplied in reels with a quantity varying based on manufacturer specifications.
Specifications
- Collector-Base Voltage (VCBO): 40V
- Collector-Emitter Voltage (VCEO): 25V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 100mA
- Total Power Dissipation: 225mW
- Transition Frequency (fT): 300MHz
Detailed Pin Configuration
The PUMH10Z transistor typically has the following pin configuration: 1. Emitter (E) 2. Base (B) 3. Collector (C)
Functional Features
- High gain and bandwidth
- Low noise and distortion
- Fast switching speed
Advantages
- Small package size
- High performance characteristics
- Versatile application potential
Disadvantages
- Limited maximum current and voltage ratings
- Sensitive to overvoltage conditions
Working Principles
The PUMH10Z operates based on the principles of bipolar junction transistor (BJT) amplification and switching, utilizing the interaction between minority and majority charge carriers within the semiconductor material.
Detailed Application Field Plans
The PUMH10Z finds extensive use in the following application fields: - Audio amplification circuits - RF signal amplification - Switching circuits in portable electronic devices - Sensor interface circuits
Detailed and Complete Alternative Models
Some alternative models to the PUMH10Z include: - BC847B - 2N3904 - MMBT3904 - BC846B
In conclusion, the PUMH10Z transistor offers high performance and versatility in a compact package, making it suitable for a wide range of electronic applications.
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প্রযুক্তিগত সমাধানে PUMH10Z এর প্রয়োগ সম্পর্কিত 10টি সাধারণ প্রশ্ন ও উত্তর তালিকাভুক্ত করুন
What is PUMH10Z?
- PUMH10Z is a high-performance NPN bipolar transistor used in various technical solutions.
What are the key features of PUMH10Z?
- PUMH10Z features high current gain, low saturation voltage, and low noise figure, making it suitable for many applications.
What are the typical applications of PUMH10Z?
- PUMH10Z is commonly used in amplification, switching, and signal processing circuits in audio equipment, instrumentation, and industrial control systems.
What is the maximum collector current of PUMH10Z?
- The maximum collector current of PUMH10Z is typically around 100mA, making it suitable for low to medium power applications.
What is the maximum power dissipation of PUMH10Z?
- The maximum power dissipation of PUMH10Z is typically around 225mW, allowing it to handle moderate power levels.
What are the recommended operating conditions for PUMH10Z?
- PUMH10Z is typically operated at a collector-emitter voltage (VCE) of 20V and a collector current (IC) of 100mA.
Is PUMH10Z suitable for high-frequency applications?
- Yes, PUMH10Z has a transition frequency (fT) of around 300MHz, making it suitable for many high-frequency applications.
Can PUMH10Z be used in temperature-sensitive environments?
- PUMH10Z has a wide operating temperature range and can be used in environments with temperatures ranging from -55°C to 150°C.
Are there any specific considerations for circuit design when using PUMH10Z?
- It is important to consider proper biasing, thermal management, and impedance matching when designing circuits using PUMH10Z to ensure optimal performance.
Where can I find detailed specifications and application notes for PUMH10Z?
- Detailed specifications and application notes for PUMH10Z can be found in the manufacturer's datasheet and application guides, which are available on their official website or through authorized distributors.