BC858AWT1G

Product Overview

• Category: Transistor
• Use: Amplification and switching in electronic circuits
• Characteristics: Small signal NPN transistor, low power, high voltage
• Package: SOT-23
• Essence: Small form factor, suitable for compact electronic devices
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Maximum Power Dissipation: 225mW
• Collector-Base Voltage (VCBO): 30V
• Collector-Emitter Voltage (VCEO): 25V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• DC Current Gain (hFE): 110-800
• Transition Frequency (fT): 150MHz

Detailed Pin Configuration

The BC858AWT1G transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

• High current gain
• Low noise
• Fast switching speed
• Small form factor

Advantages and Disadvantages

Advantages: - Suitable for low power applications - Compact package - High voltage capability

Disadvantages: - Limited maximum current rating - Moderate transition frequency

Working Principles

The BC858AWT1G operates as a small signal NPN transistor, amplifying and switching electronic signals based on the biasing of its base-emitter junction.

Detailed Application Field Plans

This transistor is commonly used in: - Audio amplifiers - Signal amplification circuits - Switching circuits

Detailed and Complete Alternative Models

1. BC847AWT1G: Similar characteristics, SOT-23 package
2. BC856AWT1G: Complementary PNP transistor, SOT-23 package
3. 2N3904: General-purpose NPN transistor, TO-92 package

---

This content provides a comprehensive overview of the BC858AWT1G transistor, covering its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.