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BC858AWT1G

BC858AWT1G

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: Small signal NPN transistor, low power, high voltage
  • Package: SOT-23
  • Essence: Small form factor, suitable for compact electronic devices
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Maximum Power Dissipation: 225mW
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 25V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • DC Current Gain (hFE): 110-800
  • Transition Frequency (fT): 150MHz

Detailed Pin Configuration

The BC858AWT1G transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed
  • Small form factor

Advantages and Disadvantages

Advantages: - Suitable for low power applications - Compact package - High voltage capability

Disadvantages: - Limited maximum current rating - Moderate transition frequency

Working Principles

The BC858AWT1G operates as a small signal NPN transistor, amplifying and switching electronic signals based on the biasing of its base-emitter junction.

Detailed Application Field Plans

This transistor is commonly used in: - Audio amplifiers - Signal amplification circuits - Switching circuits

Detailed and Complete Alternative Models

  1. BC847AWT1G: Similar characteristics, SOT-23 package
  2. BC856AWT1G: Complementary PNP transistor, SOT-23 package
  3. 2N3904: General-purpose NPN transistor, TO-92 package

This content provides a comprehensive overview of the BC858AWT1G transistor, covering its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

প্রযুক্তিগত সমাধানে BC858AWT1G এর প্রয়োগ সম্পর্কিত 10টি সাধারণ প্রশ্ন ও উত্তর তালিকাভুক্ত করুন

Sure, here are 10 common questions and answers related to the application of BC858AWT1G in technical solutions:

  1. What is the maximum collector current of BC858AWT1G?

    • The maximum collector current of BC858AWT1G is 100mA.
  2. What is the typical hFE (DC current gain) of BC858AWT1G?

    • The typical hFE of BC858AWT1G is 110-800 at a collector current of 2mA.
  3. What is the maximum power dissipation of BC858AWT1G?

    • The maximum power dissipation of BC858AWT1G is 250mW.
  4. What are the typical applications of BC858AWT1G?

    • BC858AWT1G is commonly used in audio amplification, signal processing, and general purpose switching applications.
  5. What is the maximum voltage between base and emitter (VBE) of BC858AWT1G?

    • The maximum VBE of BC858AWT1G is 6V.
  6. Is BC858AWT1G suitable for low noise amplifier circuits?

    • Yes, BC858AWT1G is suitable for low noise amplifier circuits due to its low noise characteristics.
  7. Can BC858AWT1G be used in high frequency applications?

    • Yes, BC858AWT1G can be used in high frequency applications due to its high transition frequency (fT) of 150MHz.
  8. What is the thermal resistance junction to ambient (RθJA) of BC858AWT1G?

    • The RθJA of BC858AWT1G is approximately 417°C/W.
  9. Does BC858AWT1G have a low saturation voltage?

    • Yes, BC858AWT1G has a low saturation voltage, making it suitable for switching applications.
  10. Is BC858AWT1G RoHS compliant?

    • Yes, BC858AWT1G is RoHS compliant, meeting the requirements for lead-free electronics.

I hope these questions and answers help you understand the application of BC858AWT1G in technical solutions. Let me know if you need further assistance!