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SI2328DS-T1-GE3
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SI2328DS-T1-GE3

Product Overview

Category

The SI2328DS-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate drive voltage
  • Small package size

Package

The SI2328DS-T1-GE3 is typically available in a small outline transistor (SOT-23) package.

Essence

This MOSFET is essential for efficient power management and control in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 20V
  • Continuous Drain Current (ID): 2.5A
  • On-Resistance (RDS(on)): 75mΩ
  • Power Dissipation (PD): 1.25W
  • Gate-Source Voltage (VGS): ±8V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI2328DS-T1-GE3 has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient operation
  • Small package size for space-constrained designs
  • Low gate drive voltage for ease of control

Advantages

  • High efficiency in power management
  • Suitable for compact designs
  • Reliable performance in switching applications

Disadvantages

  • Limited maximum drain-source voltage
  • Sensitive to static electricity and overvoltage conditions

Working Principles

The SI2328DS-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Battery management systems - DC-DC converters - Motor control circuits - LED lighting applications - Portable electronic devices

Detailed and Complete Alternative Models

Some alternative models to the SI2328DS-T1-GE3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2365DS-T1-GE3 - SI2399DS-T1-GE3

In conclusion, the SI2328DS-T1-GE3 power MOSFET offers high performance and reliability in various electronic applications, making it a popular choice for efficient power management and control.

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প্রযুক্তিগত সমাধানে SI2328DS-T1-GE3 এর প্রয়োগ সম্পর্কিত 10টি সাধারণ প্রশ্ন ও উত্তর তালিকাভুক্ত করুন

  1. What is the maximum drain-source voltage of SI2328DS-T1-GE3?

    • The maximum drain-source voltage of SI2328DS-T1-GE3 is 20V.

  2. What is the continuous drain current of SI2328DS-T1-GE3?

    • The continuous drain current of SI2328DS-T1-GE3 is 3.7A.

  3. What is the on-resistance of SI2328DS-T1-GE3?

    • The on-resistance of SI2328DS-T1-GE3 is typically 0.045 ohms.

  4. What is the power dissipation of SI2328DS-T1-GE3?

    • The power dissipation of SI2328DS-T1-GE3 is 1.25W.

  5. What are the typical applications for SI2328DS-T1-GE3?

    • SI2328DS-T1-GE3 is commonly used in load switching, power management, and battery protection applications.

  6. What is the operating temperature range of SI2328DS-T1-GE3?

    • The operating temperature range of SI2328DS-T1-GE3 is -55°C to 150°C.

  7. Does SI2328DS-T1-GE3 have built-in ESD protection?

    • Yes, SI2328DS-T1-GE3 features built-in ESD protection.

  8. What is the package type of SI2328DS-T1-GE3?

    • SI2328DS-T1-GE3 comes in a SOT-23 package.

  9. Is SI2328DS-T1-GE3 RoHS compliant?

    • Yes, SI2328DS-T1-GE3 is RoHS compliant.

  10. What are the key differences between SI2328DS-T1-GE3 and similar MOSFETs?

    • SI2328DS-T1-GE3 offers a low on-resistance, high current capability, and built-in ESD protection, making it suitable for various technical solutions.