The SIHU3N50D-GE3 belongs to the category of power MOSFETs and is commonly used in various electronic applications. This semiconductor device exhibits specific characteristics, comes in a particular package, and has unique functional features that make it suitable for a range of applications.
The SIHU3N50D-GE3 power MOSFET offers the following specifications: - Voltage Rating: 500V - Current Rating: 3A - On-Resistance: 3.5Ω - Gate Threshold Voltage: 2.5V - Operating Temperature Range: -55°C to 150°C - Mounting Type: Surface Mount - Package / Case: DPAK-3
The SIHU3N50D-GE3 power MOSFET has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S). The gate pin controls the flow of current between the drain and source terminals.
The SIHU3N50D-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the conductivity between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows current to flow through the circuit, and when the gate voltage is removed, the current flow ceases.
The SIHU3N50D-GE3 power MOSFET finds application in various electronic systems, including: - Switching power supplies - Motor control circuits - LED lighting drivers - Audio amplifiers - DC-DC converters
Some alternative models to the SIHU3N50D-GE3 power MOSFET include: - IRF840 - FQP30N06L - STP55NF06L - IRL540
In conclusion, the SIHU3N50D-GE3 power MOSFET offers efficient power management, fast switching speed, and low on-resistance, making it suitable for diverse electronic applications.
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