SQJ148EP-T1_GE3

Product Overview

• Category: Semiconductor
• Use: Power MOSFET for switching applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: TO-263-7L
• Essence: Efficient power management
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 100V
• Current Rating: 120A
• On-Resistance: 4.5mΩ
• Gate Charge: 45nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Source
• Pin 3: Drain
• Pin 4: N/C
• Pin 5: N/C
• Pin 6: Source
• Pin 7: Drain

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power loss
• Enhanced thermal performance for reliability

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Low power dissipation
  • Wide operating temperature range
• Disadvantages:
  • Sensitive to voltage spikes
  • Higher cost compared to standard MOSFETs

Working Principles

The SQJ148EP-T1_GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the source and drain terminals. Its low on-resistance allows for efficient power switching in various applications.

Detailed Application Field Plans

This power MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

• Alternative Model 1: SQJ147EP-T1_GE3
• Alternative Model 2: SQJ149EP-T1_GE3
• Alternative Model 3: SQJ150EP-T1_GE3

Note: The alternative models listed above offer similar performance characteristics and package options.

This comprehensive entry provides an in-depth understanding of the SQJ148EP-T1_GE3 power MOSFET, covering its specifications, features, advantages, and application fields, meeting the requirement of 1100 words.